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| FDZ206P January 2003 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features * -13 A, -20 V. RDS(ON) = 9.5 m @ VGS = -4.5 V RDS(ON) = 14.5 m @ VGS = -2.5 V * Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * 0.65 mm ball pitch * 3.5 x 4 mm2 footprint * High power and current handling capability Applications * Battery management * Load switch * Battery protection D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 S F206P G Pin 1 D D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings -20 12 -13 -60 2.2 -55 to +150 Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 C/W Package Marking and Ordering Information Device Marking 206P Device FDZ206P Reel Size 13" Tape width 12mm Quantity 3000 (c)2003 Fairchild Semiconductor Corporation FDZ206P Rev. D1(W) FDZ206P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Forward Leakage Gate-Body Reverse Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = -12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min Typ -20 -13 Max Units V mV/C Off Characteristics -1 -100 100 -0.6 -0.9 3.3 7 10 9 -60 58 4280 873 400 17 11 115 60 38 7 10 31 20 184 96 53 -1.5 A nA nA V mV/C m A S pF pF pF ns ns ns ns nC nC nC A V nS nC On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = - 4.5 V, ID = -13 A VGS = -2.5 V, ID = -10.5 A VGS = -4.5 V, ID = -13 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -13 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, 9.5 14.5 13 Dynamic Characteristics Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 VDS = -10 V, VGS = -4.5 V ID = -13 A, Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.8 A Voltage IF = -13A, Diode Reverse Recovery Time Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) -0.7 34 38 -1.8 -1.2 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper a) 56 C/W when mounted on a 1in2 pad of 2 oz copper b) 119 C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ206P Rev. D1 (W) FDZ206P Dimensional Outline and Pad Layout FDZ206P Rev. D1 (W) FDZ206P Typical Characteristics 60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =-4.5V 50 -ID, DRAIN CURRENT (A) 40 -3.0V -2.5V -2.0V 1.8 VGS = -2.5V 1.6 -3.5V 1.4 -3.0V 1.2 -3.5V -4.0V 1 -4.5V 30 20 10 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 10 20 30 40 50 60 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 o ID = -13A VGS = -4.5V ID = -6.5 A 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 1 2 3 4 5 125 150 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 60 VDS = -5V -ID, DRAIN CURRENT (A) 50 40 30 20 10 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) 25oC 125oC VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ206P Rev. D1 (W) FDZ206P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 6000 ID = -13A VDS = -5V -15V -10V 5000 CAPACITANCE (pF) 4000 3000 2000 1000 CRSS 0 0 10 20 30 40 50 f = 1MHz VGS = 0 V CISS 4 3 2 COSS 1 0 Qg, GATE CHARGE (nC) 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 119oC/W TA = 25oC 1ms Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 119 C/W TA = 25 C 30 1 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 119 C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.001 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ206P Rev. D1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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